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In addition to electron and ion columns, the FERA Plasma FIB-FE-SEM can be configured with gas injection systems, nano-manipulators, and a wide variety of detectors such as SE, BSE, SI, CL, EDX, EBSD etc.
 The use of a Xenon plasma source for the focused ion beam allows the FERA FIB-SEM to satisfy high resolution FIB requirements (imaging, fine milling / polishing), as well as achieving high ion currents needed for ultra-fast material removal rates.
The resolution of the plasma ion beam is 25 nm and the maximum Xe ion current is 2 µA. Compared to existing FIB technologies with gallium sources, the material removal rate achievable for silicon with the PFIB (Plasma FIB) is more than 50x faster. For this reason the FERA is well suited for applications requiring the removal of large volumes of material, particularly in the semiconductor packaging corridor where TSV technology is being utilized.
The FERA FIB-SEM workstations integration of both an electron and focused ion beam places this tool in a class all its own, affording the end user the benefits of electron beam analysis and characterization. Generally, systems of this kind will be used for circuit edit, 3D metrology, defect analysis and failure analysis.
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