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Key features of the MAIA3 Generation
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High brightness Schottky emitter for
ultra-high resolution / high-current / low-noise imaging.
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Unique three-lens Wide Field Optics™ design offering the variety of working and displaying modes embodying the Tescan proprietary Intermediate Lens for the beam aperture optimisation.
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Real time In-Flight Beam Tracing™ for the performance and spot optimisation integrating the well established software Electron Optical Design.
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Fast imaging rate.
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High-throughput large-area automation, e.g. automated particle location and analyses.
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Extraordinary analytical potential - up to 20 chamber ports with optimised analytical geometry allowing simultaneous EDX and EBSD.
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Fully automated microscope set-up including electron optics set-up and alignment.
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Sophisticated software for SEM control, image acquisition, archiving, processing, analysis.
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Network operations and built-in remote access/diagnostics, all as Tescan standard.
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TESCAN MAIA Chamber Specifications
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LM
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XM
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Internal Diameter
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Ø 230 mm
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290 x 340 mm (w,d)
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Door Width
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148 mm
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290 x 322 mm (w,h)
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Type
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compucentric
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compucentric
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X
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80 mm mot.
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130 mm mot.
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Y
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60 mm mot.
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130 mm mot.
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Z
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37mm mot.
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90 mm mot.
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Rotation
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360° mot.
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360° mot.
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Tilt
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-80 to +80° mot.
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-30 to +90° mot.
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Specimen Hight
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71 mm max.
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137 mm max.
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MIRA SEMs also available with special GM multi-port chamber
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TESCAN MAIA SEM Specifications
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Chamber Type
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LM- / XM- / GM
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Vacuum Type
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H
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U
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* Resolution
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High Vaccum Mode
(in-Beam SE)
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0.7 nm at 15 kV
1.4 nm at 1kV
1.7 nm at 500 V
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0.7 nm at 15 kV
1.4 nm at 1kV
1.7 nm at 500 V
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High Vaccum Mode
(with BDT option)
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1.4 nm at 1kV
2.2 nm at 200 V
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1.4 nm at 1kV
2.2 nm at 200 V
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Vacuum
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High Vacuum Mode
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< 9*10-3 Pa
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< 9*10-3 Pa
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Low Vacuum Mode
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—
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7 - 500 Pa
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Working Modes
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UH Resolution, Depth, Analysis, Overview
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Magnification
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4 to 1,000,000x (depending on chamber)
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Accelerating Voltage
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200 V to 30 kV (from 50 V with BDT version)
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Electron Gun
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High Brightness Schottky Emitter
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Probe Current
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2 pA to 400 nA
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Requirements
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230 V / 50 Hz or 120 V / 60 Hz, 2300 VA, No Water Cooling
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