- Easy to set up and operate with Window based software
- Various types of geometry substrate up to 300mm in diameter
- Various types of mapping pattern such as linear, polar, square or arbitrary coordinates
- Advanced optics and rugged design for best system performance
- Array based detector system to ensure fast measurement
- Map film thickness and Refractive Index up to 5 layers
- System comes with comprehensive optical constants database and library
- Include commonly used recipes
- Advanced TFProbe Software allows user to use either NK table, dispersion or effective media approximation (EMA) for each individual film.
- Upgradeable to MSP (Microspectrophotometer) mapping system with pattern recognition, or Large Spot for mapping over patterned or featured structure (with Zonerage Model)
- Apply to many different type of substrates with different thickness
- 2D and 3D output graphics and user friendly data management interface with statistical results
SYSTEM CONFIGURATION:
- Model: SRM300-M300
- Detector: CCD Array with 2048 pixels
- Light Source: DC regulated Tungsten-Halogen
- Light Delivery: Optics
- Stage: Black Anodized Aluminum Alloy Vacuum chuck holds up to 300 mm wafer
- Communication: USB
- Software: TFProbe 2.x/3.x
- Measurement Type: Film thickness, reflection spectrum, refractive index
- Computer: Intel Core 2 Duo Processor with 300GB Hard drive and DVD+RW Burner plus 20” LCD Monitor
- Power: 110– 240 VAC /50-60Hz, 3 A
- Dimension: 14”(W) x 20”(D) x 14”(H)
- Weight: 100 lbs
- Warranty: One year labor and parts
Thông số kỹ thuật
- Wavelength range: 400 to 1050 nm
- Spot Size: 500 µm to 5mm
- Sample Size: 300 mm in diameter
- Substrate Size: up to 50mm thick
- Number of Layers*: Up to 5 films
- Measurable thickness range*: 50 nm to 50 µm
- Measurement Time: 2ms - 1s /site typical
- Positional Repeatability: ~1 µm
- Accuracy*: better than 0.5% (comparing with ellipsometry results for Thermal Oxide sample by using the same optical constants)
- Repeatability*: < 2Å (1 sigma from 50 thickness readings at center for 1500 Å Thermal SiO2 on Si Wafer)