Chemical Mechanical Polishing/Planarization (CMP) is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. Angstrom Sun Technologies Inc has implemented multiple channel in-situ spectroscopic reflectometers in such CMP processing system, plus one channel for pre-CMP. With such implementation, CMP processing can be well controlled by knowing inital thickness and before each sub-steps. By implementing multiple channels to monitor more than one location on the polishing wafer, processing uniformity information can be obtained which is also an impotant factors in CMP performance.
Array based detector system to ensure fast measurement
Uniquely designed light source for better intensity stability
Real time or in-line Monitoring film thickness and Refractive Index up to 5 layers
Multiple Channel/Multiple Sites Simultaneous Measurement
System comes with comprehensive optical constants database and library
Apply to many different type of substrates with different thickness
Low cost
Operate with Window based software
Advanced optics with large spot design for best system performance
RS232 Protocol for Host Control
Auto log spectrum, thickness results and fitting graphs
Advanced Global ZR model allows to extract local desired information from Large Spot Area Measurement over the patterned structure such as IMD, ILD1, ILD3 etc.